FCH070N60E datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Typ. RDS(on) = 58 mW
* 650 V @ TJ = 150°C
* Ultra Low Gate Charge (Typ. Qg = 128 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF)
*.

Application

where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series. Features
* Typ.

Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize.

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